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| DataSheet.in STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 29 A MDmeshTM II Power MOSFET , TO-220, TO-247, TO-220FP Preliminary data Features Type STF34NM60N STP34NM60N STW34NM60N VDSS 600 V 600 V 600 V RDS(on) max. 0.105 0.105 0.105 ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking Package TO-220FP TO-220 TO-247 Packaging Order codes STF34NM60N STP34NM60N STW34NM60N 34NM60N Tube September 2010 Doc ID 17740 Rev 2 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. DataSheet.in Contents STF34NM60N, STP34NM60N, STW34NM60N Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 17740 Rev 2 DataSheet.in STF34NM60N, STP34NM60N, STW34NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220, TO-247 Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 29 18 116 210 12 345 15 - 55 to 150 C 150 600 25 29 (1) 18 116 40 TO-220FP V V A A A W A mJ V/ns Unit PTOT IAR EAS dv/dt(3) Tstg TJ 1. Limited only by maximu temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD 29 A, di/dt 600 A/s, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 TO-220 0.60 50 300 TO-247 TO-220FP 3.13 62.5 Unit C/W C/W C Doc ID 17740 Rev 2 3/12 DataSheet.in Electrical characteristics STF34NM60N, STP34NM60N, STW34NM60N 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4. Symbol On/off states Value Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. V 1 100 100 2 3 0.092 4 0.105 A A nA V Unit V(BR)DSS IDSS IGSS VGS(th) RDS(on) ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 14.5 A 600 Table 5. Symbol Ciss Coss Crss Coss eq.(1) td(on) tr td(off) tf Qg Qgs Qgd Rg Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. Typ. 2722 173 1.75 458 TBD TBD TBD TBD 80 16 41 2.9 Max. Unit pF pF pF pF ns ns ns ns nC nC nC VDS = 100 V, f = 1 MHz, VGS = 0 - - VGS = 0, VDS = 0 to 480 V VDD =300 V, ID = 14.5 A RG = 4.7 , VGS = 10 V (see Figure 7), (see Figure 2) VDD = 480 V, ID = 29 A, VGS = 10 V, (see Figure 3) f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain - - - - - - - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 Doc ID 17740 Rev 2 DataSheet.in STF34NM60N, STP34NM60N, STW34NM60N Electrical characteristics Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 29 A, VGS = 0 ISD = 29 A, VDD = 60 V di/dt=100 A/s (see Figure 4) ISD = 29 A,VDD = 60 V di/dt=100 A/s, TJ = 150 C (see Figure 4) Test conditions Min. TBD TBD TBD TBD TBD TBD Typ. Max. 29 116 TBD Unit A A V ns C A ns C A - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. Doc ID 17740 Rev 2 5/12 DataSheet.in Test circuits STF34NM60N, STP34NM60N, STW34NM60N 3 Figure 2. Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 2200 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 6. Unclamped inductive waveform V(BR)DSS VD Figure 7. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 6/12 Doc ID 17740 Rev 2 DataSheet.in STF34NM60N, STP34NM60N, STW34NM60N Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Doc ID 17740 Rev 2 7/12 DataSheet.in Package mechanical data Table 7. Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 STF34NM60N, STP34NM60N, STW34NM60N TO-220FP mechanical data mm Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 16 30.6 10.6 3.6 16.4 9.3 3.2 Figure 8. TO-220FP drawing L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K 8/12 Doc ID 17740 Rev 2 DataSheet.in STF34NM60N, STP34NM60N, STW34NM60N Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S Doc ID 17740 Rev 2 9/12 DataSheet.in Package mechanical data STF34NM60N, STP34NM60N, STW34NM60N TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 10/12 Doc ID 17740 Rev 2 DataSheet.in STF34NM60N, STP34NM60N, STW34NM60N Revision history 5 Revision history Table 8. Date 05-Aug-2010 02-Sep-2010 Document revision history Revision 1 2 Initial release. Updated title on cover page and Table 4: On/off states. Changes Doc ID 17740 Rev 2 11/12 DataSheet.in STF34NM60N, STP34NM60N, STW34NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. 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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 17740 Rev 2 |
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